ON Semiconductor will supply Danfoss A/S' Danfoss Silicon Power business unit with high power insulated-gate bipolar transistors (IGBTs) and diodes for inverter traction modules for the electric vehicle market.

ON Semiconductor will fabricate the high-power components in manufacturing locations in East Fishkill, New York and Bucheon, South-Korea. Danfoss will fabricate their power modules in Flensburg, Germany and Utica, New York.

ON Semiconductor has developed a wide range of automotive components, by applying advanced technology and extensive research and development (R&D) expertise, in the fields of high-voltage interfacing, smart power management, in-vehicle networking, system-level integration, and sensor interfaces. The company also provides a robust set of modeling tools that enable the designer to realize application performance in simulation rather than costly measurement cycles. In addition, utilizing the 12-inch fab in East Fishkill, ON Semiconductor is positioned to supply competitive devices at a scale necessary to serve the vehicle electrification market for years to come.

Danfoss Silicon Power is a subsidiary of the Danfoss Group from Denmark. For decades, Danfoss Silicon Power has been helping top tier manufacturers and system suppliers meet stringent reliability, design and cost targets by designing, developing and manufacturing customized power modules for automotive, industrial and renewable applications.

"Chip independency is an important and fundamental element of the Danfoss go-to market strategy. By selecting IGBT chips from ON Semiconductor we are accommodating the high growth expectations from our automotive customers", said Claus A. Petersen, Senior Vice President and General Manager, Danfoss Silicon Power.

"With investment in power technologies and manufacturing capacity globally, ON Semiconductor reiterates our firm commitment to be the top supplier of automotive high-power devices," said Asif Jakwani, Senior Vice President of the Advance Power Division at ON Semiconductor.